{"id":55,"date":"2026-03-19T11:00:00","date_gmt":"2026-03-19T11:00:00","guid":{"rendered":"https:\/\/hu-rciqe.unifiedx.dev\/en\/?post_type=laboratory&#038;p=55"},"modified":"2026-03-25T05:27:57","modified_gmt":"2026-03-25T05:27:57","slug":"integrated-electron-devices","status":"publish","type":"laboratory","link":"https:\/\/hu-rciqe.unifiedx.dev\/en\/archives\/laboratory\/integrated-electron-devices","title":{"rendered":"Integrated Electron Devices"},"content":{"rendered":"\n<div class=\"wp-block-columns is-layout-flex wp-container-core-columns-layout-1 wp-block-columns-is-layout-flex\">\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\" style=\"flex-basis:66.66%\">\n<p>We pursue the research on nanowire-based integrated devices towards energy-efficient electronics. Semiconductor nanowires enable efficient control of carriers utilizing unconventional heterostructures and materials. Based on the selective area epitaxy and nanofabrication techniques, we aim at the application for high-performance and energy-efficient nanodevices, and their integration.<\/p>\n\n\n\n<ol>\n<li>1)Integration of III-V semiconductor nanowires using selective-area epitaxy<\/li>\n\n\n\n<li>High performance and energy-efficient nanodevices<\/li>\n\n\n\n<li>Nanowire photonic devices<\/li>\n<\/ol>\n<\/div>\n\n\n\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\" style=\"flex-basis:33.3%\">\n<figure class=\"wp-block-image size-full img-border\"><img loading=\"lazy\" decoding=\"async\" width=\"410\" height=\"324\" src=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/figure01.jpg\" alt=\"\" class=\"wp-image-66\" srcset=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/figure01.jpg 410w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/figure01-300x237.jpg 300w\" sizes=\"(max-width: 410px) 100vw, 410px\" \/><figcaption class=\"wp-element-caption\">Epitaxially grown nanowires<\/figcaption><\/figure>\n<\/div>\n<\/div>\n\n\n\n<div class=\"wp-block-columns is-layout-flex wp-container-core-columns-layout-2 wp-block-columns-is-layout-flex\">\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\">\n<figure class=\"wp-block-image size-full img-border\"><img loading=\"lazy\" decoding=\"async\" width=\"854\" height=\"380\" src=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf10-2.png\" alt=\"\" class=\"wp-image-71\" srcset=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf10-2.png 854w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf10-2-300x133.png 300w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf10-2-768x342.png 768w\" sizes=\"(max-width: 854px) 100vw, 854px\" \/><figcaption class=\"wp-element-caption\">Nanowire-based light emitter &amp; receiver for telecom band<\/figcaption><\/figure>\n<\/div>\n\n\n\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\">\n<figure class=\"wp-block-image size-full img-border\"><img loading=\"lazy\" decoding=\"async\" width=\"806\" height=\"378\" src=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf11-2.png\" alt=\"\" class=\"wp-image-72\" srcset=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf11-2.png 806w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf11-2-300x141.png 300w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf11-2-768x360.png 768w\" sizes=\"(max-width: 806px) 100vw, 806px\" \/><figcaption class=\"wp-element-caption\">High-performance &amp; low-voltage switching devices<\/figcaption><\/figure>\n<\/div>\n\n\n\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\">\n<figure class=\"wp-block-image size-full img-border\"><img loading=\"lazy\" decoding=\"async\" width=\"562\" height=\"393\" src=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf17-1.png\" alt=\"\" class=\"wp-image-70\" srcset=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf17-1.png 562w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf17-1-300x210.png 300w\" sizes=\"(max-width: 562px) 100vw, 562px\" \/><figcaption class=\"wp-element-caption\">Next-generation 3D-stacked quantum ICs<\/figcaption><\/figure>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>We pursue the research on nanowire-based integrated devices towards energy-efficient electronics. Semiconductor nanowires enable efficient control of carriers utilizing unconventional heterostructures and materials. Based on the selective area epitaxy and nanofabrication techniques, we aim at the application for high-performance and energy-efficient nanodevices, and their integration.<\/p>\n","protected":false},"author":1,"featured_media":0,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/laboratory\/55"}],"collection":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/laboratory"}],"about":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/types\/laboratory"}],"author":[{"embeddable":true,"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/users\/1"}],"wp:attachment":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/media?parent=55"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}