{"id":44,"date":"2026-03-21T12:00:00","date_gmt":"2026-03-21T12:00:00","guid":{"rendered":"https:\/\/hu-rciqe.unifiedx.dev\/en\/?post_type=laboratory&#038;p=44"},"modified":"2026-03-25T05:26:44","modified_gmt":"2026-03-25T05:26:44","slug":"advanced-electronic-nanomaterials","status":"publish","type":"laboratory","link":"https:\/\/hu-rciqe.unifiedx.dev\/en\/archives\/laboratory\/advanced-electronic-nanomaterials","title":{"rendered":"Advanced Electronic Nanomaterials"},"content":{"rendered":"\n<div class=\"wp-block-columns is-layout-flex wp-container-core-columns-layout-1 wp-block-columns-is-layout-flex\">\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\" style=\"flex-basis:66.6%\">\n<p>Based on the epitaxial growth of III-V compound semiconductors, we explore new electronic nanomaterials and hetero-structure. We thus try to establish materials of heterogeneous junction nanowires, high-efficiency electronic and photonic energy conversion, new-generation communication devices, and high-performance nano-electronics\/photonics.<\/p>\n\n\n\n<ol>\n<li>Exploration of novel electronic nano-materials with interface control<\/li>\n\n\n\n<li>Pursue electronic devices with performance overcoming present limitation<\/li>\n\n\n\n<li>Semiconductor\/Oxide nano composites and their application to novel devices<\/li>\n<\/ol>\n<\/div>\n\n\n\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\" style=\"flex-basis:33.3%\">\n<figure class=\"wp-block-image size-full img-border\"><img loading=\"lazy\" decoding=\"async\" width=\"258\" height=\"347\" src=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/image.png\" alt=\"\" class=\"wp-image-45\" srcset=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/image.png 258w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/image-223x300.png 223w\" sizes=\"(max-width: 258px) 100vw, 258px\" \/><figcaption class=\"wp-element-caption\">Self assembled nanostructures showing a prospect for new generation devices<\/figcaption><\/figure>\n\n\n\n<figure class=\"wp-block-image size-full img-border\"><img loading=\"lazy\" decoding=\"async\" width=\"667\" height=\"732\" src=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf1.png\" alt=\"\" class=\"wp-image-47\" srcset=\"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf1.png 667w, https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-content\/uploads\/2026\/03\/\u753b\u50cf1-273x300.png 273w\" sizes=\"(max-width: 667px) 100vw, 667px\" \/><figcaption class=\"wp-element-caption\">Novel bottom-up fabrication technologies of hybrid nanostructures between semiconductor and oxides.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>Based on the epitaxial growth of III-V compound semiconductors, we explore new electronic nanomaterials and hetero-structure. We thus try to establish materials of heterogeneous junction nanowires, high-efficiency electronic and photonic energy conversion, new-generation communication devices, and high-performance nano-electronics\/photonics.<\/p>\n","protected":false},"author":1,"featured_media":0,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/laboratory\/44"}],"collection":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/laboratory"}],"about":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/types\/laboratory"}],"author":[{"embeddable":true,"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/users\/1"}],"wp:attachment":[{"href":"https:\/\/hu-rciqe.unifiedx.dev\/en\/wp-json\/wp\/v2\/media?parent=44"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}