Integrated Electron Devices

We pursue the research on nanowire-based integrated devices towards energy-efficient electronics. Semiconductor nanowires enable efficient control of carriers utilizing unconventional heterostructures and materials. Based on the selective area epitaxy and nanofabrication techniques, we aim at the application for high-performance and energy-efficient nanodevices, and their integration.

  1. 1)Integration of III-V semiconductor nanowires using selective-area epitaxy
  2. High performance and energy-efficient nanodevices
  3. Nanowire photonic devices
Epitaxially grown nanowires
Nanowire-based light emitter & receiver for telecom band
High-performance & low-voltage switching devices
Next-generation 3D-stacked quantum ICs

Research Keywords

  • Semiconductor nanowires
  • Electron & optoelectronic
  • nanodevices
  • Functional electron devices

Faculty & Research Staff

Junichi Motohisa

Junichi Motohisa

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Professor

Research Keywords

  • Semiconductor nanowire
  • Semiconductor nanophotonic devices
  • Semiconductor nanoelectronic devices
  • Nitride-based semicoductor nanostructures
Katsuhiro Tomioka

Katsuhiro Tomioka

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Professor

Research Keywords

  • Semiconductor nanostructures
  • Thin-film growth / epitaxy
  • Semiconductor devices
  • Semiconductor device process
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